PowerMOS transistor Fast recovery diode FET

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control applications, eg. In full bridge configurations for which faster recovery characteristics simplify design for indu

文件：207.09 Kbytes 页数：5 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

文件：374.08 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Fast recovery diode FET

恩XP

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

文件：374.08 Kbytes 页数：2 Pages

ISC

无锡固电