BUK653R5-55C数据表ic资料行情报价安世-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
BUK653R5-55C	文件：490.15 Kbytes Page：15 Pages	N-channel TrenchMOS intermediate level FET 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive appl 文件：490.15 Kbytes 页数：15 Pages	NEXPERIA 安世	NEXPERIA
BUK653R5-55C	文件：300 bytes Page：1 Pages	N-channel TrenchMOS intermediate level FET Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.	Nexperia 安世	Nexperia
BUK653R5-55C,127	文件：300 bytes Page：1 Pages	MOSFET N-CH 55V 120A TO220AB	恩XP	恩XP
BUK763R1-60E	文件：0 bytes Page：0 Pages	D2PAK	NEXPERIA 安世上传：万三科技(深圳)有限公司	NEXPERIA
BUK765R0-100E,118	文件：0 bytes Page：0 Pages	D2PAK	NEXPERIA/安世上传：深圳市盈慧通电子有限公司	NEXPERIA/安世

更多BUK653R5-55C供应商更新时间2026-2-6 16:04:00