丝印：BSS；Package：SOT-723；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：73.43 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

丝印：SA-；Package：SOT-23；N-channel enhancement mode vertical D-MOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. The BSS123 is supplied in the SOT23 subminiature surface mounting package. FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiatur

文件：56.92 Kbytes 页数：4 Pages

PHI

飞利浦

丝印：SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：284.54 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

文件：67.74 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：145.18 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：SA；Package：SOT-23；N-CHANNEL POWER MOSFET

FEATURE ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

文件：671.74 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

丝印：B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

文件：594.71 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：SA.x；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Low on-resistance High-speed switching Drive circuits can be simple Parallel use is easy

文件：1.51624 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：B123；Package：SOT-23；N-Channel 100-V(D-S) MOSFET

FEATURE: ● Rugged and Relaible ● High density cell design for extremely low RDS(on) ● Surface Mount Package ● Voltage Controlled Small Signal Switch VDS(V)=100V ID = 0.17A (VGS =10V) RDS(ON)

文件：493.66 Kbytes 页数：3 Pages

UMW

友台半导体

丝印：B123；Package：SOT-23；N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：937.51 Kbytes 页数：5 Pages

SY

顺烨电子