BSS123分立半导体产品的晶体管-FETMOSFET-单个规格书PDF中文资料

General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.

特性 Features

■ BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V.

BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V

■ High density cell design for extremely low RDS(ON).

■ Voltage controlled small signal switch.

■ Rugged and reliable.