丝印：C23；Package：SSOP；SN74LVC1G123 Single Retriggerable Monostable Multivibrator With Schmitt-Trigger Inputs

1 Features • Available in the Texas Instruments NanoFree™ Package • Supports 5V VCC Operation • Inputs Accept Voltages to 5.5V • Max tpd of 8ns at 3.3V • Supports Mixed-Mode Voltage Operation on All Ports • Supports Down Translation to VCC • Schmitt-Trigger Circuitry on A and B Inputs for

文件：1.1776 Mbytes 页数：32 Pages

TI

德州仪器

丝印：C23；Package：SSOP；SN74LVC1G123 Single Retriggerable Monostable Multivibrator With Schmitt-Trigger Inputs

1 Features • Available in the Texas Instruments NanoFree™ Package • Supports 5V VCC Operation • Inputs Accept Voltages to 5.5V • Max tpd of 8ns at 3.3V • Supports Mixed-Mode Voltage Operation on All Ports • Supports Down Translation to VCC • Schmitt-Trigger Circuitry on A and B Inputs for

文件：1.1776 Mbytes 页数：32 Pages

TI

德州仪器

丝印：C23；Package：SSOP；SN74LVC1G123 Single Retriggerable Monostable Multivibrator With Schmitt-Trigger Inputs

1 Features • Available in the Texas Instruments NanoFree™ Package • Supports 5V VCC Operation • Inputs Accept Voltages to 5.5V • Max tpd of 8ns at 3.3V • Supports Mixed-Mode Voltage Operation on All Ports • Supports Down Translation to VCC • Schmitt-Trigger Circuitry on A and B Inputs for

文件：1.1776 Mbytes 页数：32 Pages

TI

德州仪器

丝印：C23；Package：SSOP；SN74LVC1G123 Single Retriggerable Monostable Multivibrator With Schmitt-Trigger Inputs

1 Features • Available in the Texas Instruments NanoFree™ Package • Supports 5V VCC Operation • Inputs Accept Voltages to 5.5V • Max tpd of 8ns at 3.3V • Supports Mixed-Mode Voltage Operation on All Ports • Supports Down Translation to VCC • Schmitt-Trigger Circuitry on A and B Inputs for

文件：1.1776 Mbytes 页数：32 Pages

TI

德州仪器

丝印：C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

文件：67.74 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：367.31 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：128.61 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：C2314；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Transceiver Driver Applications

文件：999.47 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：C2314；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Transceiver Driver Applications

文件：999.47 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：C2383；Package：TO-92L；TO-92L Plastic-Encapsulate Transistors

FEATURE High Voltage: VCEO=160V Large Continuous Collector Current Capability Complementary to 2SA1013

文件：1.49012 Mbytes 页数：5 Pages

DGNJDZ

南晶电子