BSS123分立半导体产品的晶体管-FETMOSFET-单个规格书PDF中文资料

Description and Applications

These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as:

• Small Servo Motor Control

• Power MOSFET Gate Drivers

• Switching Applications

Features and Benefits

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• High Drain-Source Voltage Rating

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable (Note 4)