UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

文件：70.32 Kbytes 页数：10 Pages

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飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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UHF power transistor

文件：63.11 Kbytes 页数：10 Pages

PHI

飞利浦

UHF power transistor

DESCRIPTION\nNPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band.FEATURES\n• SMD encapsulation\n• Gold metallization ensures excellent reliability. • SMD encapsulation\n• Gold metallization ensures excellent reliability.;

恩XP