VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ov

文件：81.55 Kbytes 页数：11 Pages

PHI

PHI

VHP power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f.and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ove

文件：115.23 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES •

文件：63.52 Kbytes 页数：10 Pages

PHI

PHI

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors intended for common emitter, class-AB operation in base station transmitters in the frequency range 850 to 960 MHz, Both transistors have a SOT273 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • H

文件：247.57 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors intended for common emitter, class-AB operation in base station transmitters in the frequency range 850 to 960 MHz, Both transistors have a SOT273 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • H

文件：247.57 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for common emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base. FEATURES •

文件：89.97 Kbytes 页数：10 Pages

PHI

PHI

BLV108

description: N-channel enhanced VDMOS, high speed switch, no secondary breakdown

文件：90.07 Kbytes 页数：2 Pages

BELLING

上海贝岭

射频(RF)双极晶体管 RF Transistor

ASI Semiconductor

VHF power transistor

恩XP

VHF power transistor

NJS