BFP720FESD数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

The BFP720FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP720FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

特性 Features

·Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
·2 kV ESD robustness (HBM) due to integrated protection circuits
·High maximum RF input power of 21 dBm
·0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 10 GHz, 5 mA
·26 dB maximum gain (Gms) typical at 2.4 GHz, 22 dB at 5.5 GHz, 15 mA
·21 dBm OIP3 typical at 5.5 GHz, 15 mA
·Accurate SPICE GP model available to enable effective design in process (see chapter 6)
·Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads

应用 Application

As Low Noise Amplifier (LNA) in:·Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth
·Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
·Multimedia applications such as mobile/portable TV, CATV, FM radio
·3G/4G UMTS/LTE mobile phone applications
·ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.As discrete active mixer, amplifier in VCOs and buffer amplifier

简介

BFP720FESD属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP720FESD晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。