BC847DS

45V,100mANPN/NPNgeneral-purposetransistor

Features *Lowcollectorcapacitance *Lowcollector-emittersaturationvoltage *Closelymatchedcurrentgain *Reducesnumberofcomponentsandboardspace *Nomutualinterferencebetweenthetransistors *AEC-Q101qualified

BC847E

GeneralPurposeTransistors

BC847F

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

BC847F

NPNSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=45V •ComplementarypairwithBC857F

BC847M

NPNgeneralpurposetransistors

DESCRIPTION NPNgeneralpurposetransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:BC857Mseries. FEATURES •Leadlessultrasmallplasticpackage(1mm×0.6mm×0.5mm) •Boardspace1.3×0.9mm •PowerdissipationcomparabletoSOT23. APPLICATIONS •Generalpu

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialDieConstruction •TwoInternallyIsolatedNPN/PNPTransistorsinOnePackage •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevi

BC847PN

NPN/PNPSiliconAFTransistorArray

NPN/PNPSiliconAFTransistorArrays •ForAFinputstageanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedNPN/PNP transistorinonepackage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR

BC847PN

ComplementarySurfaceMountGeneralPurposeSi-PlanarTransistors

Features TwocomplementarytransistorsinonepackageGeneralPurpose ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,Switching,Amplification Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01

BC847PN

Multi-ChipTransistor

FEATURE •EpitaxialDieConstruction •TwointernalisolatedNPN/PNPtransistorsinonepackage •PowerDissipation PCM:0.2W(Temp.=25˚C) •CollectorCurrent ICM:0.1A •Collector-baseVoltage V(BR)CBO:50/-50V •Operating&StorageJunctionTemperature TJ,TSTG: