NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

文件：46.35 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：2Gs；Package：SOT-23；NPN Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：216.64 Kbytes 页数：8 Pages

Infineon

英飞凌

Surface mount Si-Epitaxial PlanarTransistors

General Purpose Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：186.57 Kbytes 页数：2 Pages

Diotec

德欧泰克

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon * Moisture Sensitivity Level: 1 * ESD Rating - Human Body Model:>4000V - Machine Model:>400V

文件：277.22 Kbytes 页数：5 Pages

WEITRON

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

文件：139.97 Kbytes 页数：8 Pages

恩XP

General Purpose Transistors

General Purpose Transistors NPN Silicon

文件：194.55 Kbytes 页数：4 Pages

ETL

亚历电子

SMD NPN Transistor

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V,Machine Model: >400 V • Epitaxial plana chip construction • Ideal for medium power application and switching • As complementary type, the PNP transistor

文件：121.72 Kbytes 页数：9 Pages

FORMOSA

美丽微半导体

NPN General Purpose Transistors

■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● PNP complements: BC859 and BC860.

文件：40.97 Kbytes 页数：2 Pages

KEXIN

科信电子

NPN GENERAL PURPOSE TRANSISTORS

FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Pb free product are available : 99 Sn above can meet Rohs environment substance directive request

文件：504.42 Kbytes 页数：6 Pages

PANJIT

強茂

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)

NPN Silicon AF Transistors Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP)

文件：273.96 Kbytes 页数：8 Pages

SIEMENS

西门子