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BC850CLT1

General Purpose Transistors(NPN Silicon)

GeneralPurposeTransistors NPNSilicon

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

BC850CLT1G

General Purpose Transistors(NPN Silicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC850CLT1G

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC850CLT1G

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC850CMTF

丝印:8EC;Package:SOT-23;NPN Epitaxial Silicon Transistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC850CT

NPN Silicon AF Transistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC850CW

丝印:2G-;Package:SOT-323;NPN general purpose transistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BC850CW

丝印:2Gs;Package:SOT-323;NPN Silicon AF Transistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC850CW

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

BC850CW

NPN GENERAL PURPOSE TRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

PANJITPan Jit International Inc.

強茂強茂股份有限公司

技术参数

  • 电流 - 集电极(Ic)(最大值):

    100mA

  • 电压 - 集射极击穿(最大值):

    45V

  • 不同 Ib,Ic 时的 Vce 饱和值(最大值):

    600mV @ 5mA,100mA

  • 电流 - 集电极截止(最大值):

    15nA(ICBO)

  • 不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值):

    420 @ 2mA,5V

  • 功率 - 最大值:

    310mW

  • 频率 - 跃迁:

    300MHz

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23-3

供应商型号品牌批号封装库存备注价格
恩XP
24+
标准封装
57048
全新原装正品/价格优惠/质量保障
询价
NEXPERIA/安世
25+
SOT-23
600000
NEXPERIA/安世全新特价BC850C即刻询购立享优惠#长期有排单订
询价
215
1200000
15+
0
原厂原装
询价
恩XP
24+
SOT23
89000
全新原装现货,假一罚十
询价
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEXPERIA/安世
20+
SOT-23
120000
原装正品 可含税交易
询价
NEXPERIA/安世
21+
SOT-23-3
60000
绝对原装正品现货,假一罚十
询价
恩XP
2410+
SOT-23
500000
原装正品.假一赔百.正规渠道.原厂追溯.
询价
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
Slkor/萨科微
24+
SOT-23
50000
Slkor/萨科微一级代理,价格优势
询价
更多BC850C供应商 更新时间2025-7-30 16:26:00