BC849B

NPN general purpose transistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC849B

GENERAL PURPOSE TRANSISTOR NPN SILICON

GeneralPurposeTransistor NPNSilicon

BC849B

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)

NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP)

BC849B

Surface mount Si-Epitaxial PlanarTransistors

GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC849B

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon

BC849B

General Purpose Transistor NPN Silicon

GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V

BC849B

NPN GENERAL PURPOSE TRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

BC849B

NPN General Purpose Transistors

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●PNPcomplements:BC859andBC860.

BC849B

Marking：2Bs；Package：SOT-23；NPN Silicon AF Transistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BC849B

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon