BC849B

SMD NPN Transistor

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor

BC849B

Marking：2B；Package：SOT-23；Small Signal Transistors (NPN)

FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ♦Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ

BC849B

Marking：2B；Package：SOT23；NPN general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC859andBC860.

BC849B

Marking：2Bs；Package：SOT-23；NPN Silicon AF Transistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BC849B

NPN general purpose transistors

BC849B

NPN Transistors

BC849B

NPN Plastic-Encapsulate Transistors

BC849B

Marking：2B；Package：SOT-23；NPN Transistors

BC849B

SMD General Purpose NPN Transistors

BC849B

Marking：2Bs；Package：SOT-23；NPN Silicon AF Transistors