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BD2051AFJ

1chLargeCurrentOutputUSBHighSideSwitchICs

ROHMRohm

罗姆罗姆半导体集团

BD2051AFJ

SiliconmonolithicintegratedcircuitUSBhighsideswitchIC

Description SinglechannelhighsideswitchICforUSBportisahighsideswitchhavingovercurrentprotectionusedinpowersupplylineofuniversalserialbus(USB). N-channelpowerMOSFEToflowonresistanceandlowsupplycurrentarerealizedinthisIC. And,overcurrentdetectioncircu

ROHMRohm

罗姆罗姆半导体集团

BD2051AFJ

1chHighSideSwitchICsforUSBDevicesandMemoryCards

ROHMRohm

罗姆罗姆半导体集团

BD2051AFJ

1.0ACurrentLimitHighSideSwitchICs

Description SinglechannelhighsideswitchICforUSBportisahighsideswitchhavingovercurrentprotectionusedinpowersupplylineofuniversalserialbus(USB). N-channelpowerMOSFEToflowonresistanceandlowsupplycurrentarerealizedinthisIC. And,overcurrentdetectioncircu

ROHMRohm

罗姆罗姆半导体集团

CZRB2051

SurfaceMountZenerDiode

Voltage:11-100VoltsPower:2.0Watt Features -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -Excellentclampingcapability -TypicalIlessthan1uAabove11VD -Highte

COMCHIPComchip Technology

典琦典琦科技股份有限公司

DK2051

HIGHPERFORMANCEWIDEBANDRFPLL/VCOWITHINTEGRATEDRFMIXERS

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

EPC2051

EnhancementModePowerTransistor

EPC-CO

Efficient Power Conversion Corporation.

FTS2051

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

Features •LowON-resistance. •4Vdrive. •Mountingheight1.1mm.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

GRF2051

Ultra-LowNoiseAmplifierTuningRange:0.7–3.8GHz

Features Reference:5V/70mA/1.9GHz •Gain:19.0dB •EvalBoardNF:0.37dB •OP1dB:21.0dBm •OIP3:36.0dBm •FlexibleBiasVoltageandCurrent •Process:GaAspHEMT Applications •CellularInfrastructure •SmallCellsandCellularRepeaters •DistributedAntennaSystems •HighPer

GUERRILLA

Guerrilla RF, Inc.

HAT2051T

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance •Capableof2.5Vgatedrive •Lowdrivecurrent •Highdensitymounting

HitachiHitachi Semiconductor

日立日立公司

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