NPN medium power transistor

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complement: BC869. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

文件：43.03 Kbytes 页数：8 Pages

PHI

飞利浦

0.5W NPN Medium Power Transistors

Features • High current • Low voltage • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

文件：271.56 Kbytes 页数：3 Pages

MCC

NPN medium power transistor;

General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Two current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061

文件：155.6 Kbytes 页数：9 Pages

恩XP

NPN Medium Power Transistor

Features ● High current ● Two current gain selections ● 1.2 W total power dissipation.

文件：53.47 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：CDC；Package：SOT-89；Plastic-Encapsulate NPN Transistors

FEATURES • High current：1A • PD Power Dissipation:500mW

文件：1.46887 Mbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：CDC；Package：SC-62；20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：2.12979 Mbytes 页数：23 Pages

NEXPERIA

安世

NPN Medium Power Transistors 0.5W

文件：376.09 Kbytes 页数：3 Pages

MCC

20 V, 2 A NPN medium power transistors

文件：1.18878 Mbytes 页数：23 Pages

PHI

飞利浦

20 V, 2 A NPN medium power transistor

NPN medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: BC869. • High current\n• Two current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

Nexperia

安世

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869 PARTMARKING DETAILS– BC868 - CAC BC868-16 - CCC

文件：27.84 Kbytes 页数：1 Pages

Zetex