BC849CW

Marking：2Cs；Package：SOT-323；NPN Silicon AF Transistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

BC849CW

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC849CW

NPN GENERAL PURPOSE TRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

BC849CW

Marking：2C*；Package：SOT-323；NPN general purpose transistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

BC849CW

NPN Transistor

FEATURES -Lowreversecurrent,highreliability -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

BC849CW

Marking：2C*；Package：SOT-323；NPN general purpose transistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

BC849CW

Marking：2C；Package：SOT323；NPN general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BC849CW

Marking：1G；Package：SOT-323；NPN Silicon Epitaxial Planar Transistor

BC849CW

NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

BC849CW

NPN Transistor