45V NPN SMALL SIGNAL TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 45V • IC = 100mA High Collector Current • PD = 435mW Power Dissipation • 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 • 0.4mm Height Pac

文件：395.9 Kbytes 页数：7 Pages

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美台半导体

45V NPN SMALL SIGNAL TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 45V • IC = 100mA High Collector Current • PD = 435mW Power Dissipation • 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 • 0.4mm Height Pac

文件：395.9 Kbytes 页数：7 Pages

DIODES

美台半导体

45V NPN SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO > 45V IC = 100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40 Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary PNP Type BC857BZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：217.01 Kbytes 页数：7 Pages

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美台半导体

丝印：1F；Package：X2-DFN0606-3；45V NPN SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO > 45V IC = 100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40 Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary PNP Type BC857BZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：217.01 Kbytes 页数：7 Pages

DIODES

美台半导体

Small Signal Transistor

Features - Power dissipation PCM: 0.20W (@TA=25 °C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V - Operating and storage junction temperature range: TJ, TSTG= -65 to +150 °C

文件：156.63 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：G1F；Package：SOT-23；NPN General purpose transistor

Features 1) BVCEO>45V(IC=1mA) 2) Complements the BC857B HZG. Application AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

文件：1.36945 Mbytes 页数：8 Pages

ROHM

罗姆

3-phase inverter based on STSPIN32F0251

Features • Input voltage 什om 20 V to 120 V DC/AC • STD17NF25 MOSFETs power stage featuring: - VDS = 250 V - Ros(on)max.= 0.165 Q • Overcurrent threshold set to 16 Apeak • Dual footprint for IGBT/MOSFET package: 一 DPAK - PowerFlat 6x5 • Single-shunt current sensing, suitable for: - Sensor

文件：6.25984 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

GENERAL PURPOSE TRANSISTORS NPN SILICON

DESCRIPTION The BC846 AL /BL A 8 4 7 8 4 8 A L / CL are available in SOT 23 p ackage. FEATURES ⚫ H ig h current gain ⚫ E xcellent h FE linearity ⚫ L ow noise between 30Hz and 15k H z ⚫ F or A F input stages and driver applications ⚫ Availabl e in SOT 23 p ackage A PPL ICATIONS ⚫ G e

文件：888.85 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE

Features • Low Deviation in Base-Emitter Voltage • Surface Mount Package • Ideally Suited for Automated Assembly Processes • Lead Free by Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability

文件：100.74 Kbytes 页数：5 Pages

DIODES

美台半导体

SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE

Features • Low Deviation in Base-Emitter Voltage • Surface Mount Package • Ideally Suited for Automated Assembly Processes • Lead Free by Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability

文件：100.74 Kbytes 页数：5 Pages

DIODES

美台半导体