Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features • Pb−Free Package is Avail

文件：106.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：133.42 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S and NSV Prefixes for Automotive and Other Applications Requiri

文件：144.9 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

NPN Small Signal Surface Mount Transistor

Features © Epitaxial die construction ® Ultra-small surface mount package

文件：1.30919 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S and NSV Prefixes for Automotive and Other Applications Requiri

文件：144.9 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：133.42 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

For AF input stages and driver applications

NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857...-BC860...(PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

文件：881.87 Kbytes 页数：13 Pages

INFINEON

英飞凌

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

文件：51.75 Kbytes 页数：8 Pages

PHI

PHI

45V NPN SMALL SIGNAL TRANSISTOR

Features • BVCEO > 45V • IC = 100mA High Collector Current • PD = 435mW Power Dissipation • 0.48mm2 Package Footprint, 16 times smaller than SOT23 • 0.4mm Height Package Minimizing Off-Board Profile • Complementary PNP Type BC857BFA • Totally Lead-Free & Fully RoHS Compliant (Notes 1 &a

文件：284.31 Kbytes 页数：7 Pages

DIODES

美台半导体

45V NPN SMALL SIGNAL TRANSISTOR

Features • BVCEO > 45V • IC = 100mA High Collector Current • PD = 435mW Power Dissipation • 0.48mm2 Package Footprint, 16 times smaller than SOT23 • 0.4mm Height Package Minimizing Off-Board Profile • Complementary PNP Type BC857BFA • Totally Lead-Free & Fully RoHS Compliant (Notes 1 &a

文件：284.31 Kbytes 页数：7 Pages

DIODES

美台半导体