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BC847B-7

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>45V •IC=100mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

DIODESDiodes Incorporated

达尔科技

DIODES

BC847B-7

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH

DIODESDiodes Incorporated

达尔科技

DIODES

BC847BDW

General Purpose Transistor NPN Duals

GeneralPurposeTransistor NPNDuals

WEITRONWEITRON

威堂電子科技

WEITRON

BC847BDW

Dual General Purpose Transistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN

BC847BDW

SOT-363 Plastic-Encapsulate Transistors

APPLICATION Thisdeviceisdesignedforgeneralpurposeamplifierapplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

BC847BDW

Plastic-Encapsulate Transistors

FEATURES Twotransistorsinonepackage Reducesnumberofcomponentsandboardspace Nomutualinterferencebetweenthetransistors

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

BC847BDW1T1

Dual General Purpose Transistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC846BDW1T1=1B BC847BDW1T1=1F BC848CDW1T1=1L Features •Pb−FreePackageisAvail

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BDW1T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

ETL

E-Tech Electronics LTD

ETL

BC847BDW1T1G

Dual General Purpose Transistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC846BDW1T1=1B BC847BDW1T1=1F BC848CDW1T1=1L Features •Pb−FreePackageisAvail

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BDW1T1G

Dual General Purpose Transistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BDW1T1G

Dual General Purpose Transistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SandNSVPrefixesforAutomotiveandOtherApplications Requiri

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BDW1T3G

Dual General Purpose Transistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BDW1T3G

Dual General Purpose Transistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SandNSVPrefixesforAutomotiveandOtherApplications Requiri

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847B-E6327

For AF input stages and driver applications

NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC857...-BC860...(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BC847BF

NPN general purpose transistors

DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BC847BFA

45V NPN SMALL SIGNAL TRANSISTOR

Features •BVCEO>45V •IC=100mAHighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2PackageFootprint,16timessmallerthanSOT23 •0.4mmHeightPackageMinimizingOff-BoardProfile •ComplementaryPNPTypeBC857BFA •TotallyLead-Free&FullyRoHSCompliant(Notes1&a

DIODESDiodes Incorporated

达尔科技

DIODES

BC847BFA-7B

45V NPN SMALL SIGNAL TRANSISTOR

Features •BVCEO>45V •IC=100mAHighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2PackageFootprint,16timessmallerthanSOT23 •0.4mmHeightPackageMinimizingOff-BoardProfile •ComplementaryPNPTypeBC857BFA •TotallyLead-Free&FullyRoHSCompliant(Notes1&a

DIODESDiodes Incorporated

达尔科技

DIODES

BC847BFAQ

45V NPN SMALL SIGNAL TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>45V •IC=100mAHighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2PackageFootprint,16TimesSmallerthanSOT23 •0.4mmHeightPac

DIODESDiodes Incorporated

达尔科技

DIODES

BC847BFAQ-7B

45V NPN SMALL SIGNAL TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>45V •IC=100mAHighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2PackageFootprint,16TimesSmallerthanSOT23 •0.4mmHeightPac

DIODESDiodes Incorporated

达尔科技

DIODES

BC847BFZ

45V NPN SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO>45V IC=100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryPNPTypeBC857BZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimon

DIODESDiodes Incorporated

达尔科技

DIODES

产品属性

  • 产品编号:

    BC847B

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 系列:

    SOT-23

  • 包装:

    剪切带(CT)带盒(TB)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 5mA,100mA

  • 电流 - 集电极截止(最大值):

    100nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    200 @ 2mA,5V

  • 频率 - 跃迁:

    100MHz

  • 工作温度:

    -65°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23

  • 描述:

    TRANS NPN 45V 0.1A SOT23-3

供应商型号品牌批号封装库存备注价格
NXP
22+
SOT-23
90000
只做原装正品,假一赔十
询价
NXP/恩智浦
2019+全新原装正品
SOT23
8950
BOM配单专家,发货快,价格低
询价
NXP/恩智浦
22+
SOT23
6452
只做原装正品现货!或订货假一赔十!
询价
NXP
2122+
SOT-23
16000
原装正品,假一赔十
询价
NXP/恩智浦
21+
SOT23
34000
原装现货,一站式配套
询价
NEXPERIA/安世
23+
SOT23
20000
热卖优势现货
询价
NXP/恩智浦
21+
SOT-23
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
NXP(恩智浦)
23+
标准封装
34048
全新原装正品/价格优惠/质量保障
询价
215
22383000
15+
0
原厂原装
询价
NXP
16+/17+
SOT23
3500
原装正品现货供应56
询价
更多BC847B供应商 更新时间2024-4-25 14:31:00