BC847BFAQ

45V NPN SMALL SIGNAL TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>45V •IC=100mAHighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2PackageFootprint,16TimesSmallerthanSOT23 •0.4mmHeightPac

BC847BFAQ-7B

45V NPN SMALL SIGNAL TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>45V •IC=100mAHighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2PackageFootprint,16TimesSmallerthanSOT23 •0.4mmHeightPac

BC847BFAQ-7B

Package：3-XFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.1A 3DFN

BC847BFZ

45VNPNSMALLSIGNALTRANSISTORINDFN0606

Features BVCEO>45V IC=100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryPNPTypeBC857BZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimon

BC847B-G

SmallSignalTransistor

Features -PowerdissipationPCM:0.20W(@TA=25°C) -CollectorcurrentICM:0.1A -Collector-basevoltageVCBO:BC846=80VBC847=50VBC848=30V -Operatingandstoragejunctiontemperaturerange:TJ,TSTG=-65to+150°C

BC847BHZG

NPNGeneralpurposetransistor

Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC857BHZG. Application AUDIOFREQUENCYSMALLSIGNALAMPLIFIER

BC847BL

GENERALPURPOSETRANSISTORSNPNSILICON

DESCRIPTION The BC846AL/BLA847848AL/CLare availableinSOT23package. FEATURES ⚫Highcurrentgain ⚫ExcellenthFElinearity ⚫Lownoisebetween30Hzand15kHz ⚫ForAFinputstagesanddriverapplications ⚫AvailableinSOT23package APPLICATIONS ⚫Ge

BC847BL

3-phaseinverterbasedonSTSPIN32F0251

Features •Inputvoltage什om20Vto120VDC/AC •STD17NF25MOSFETspowerstagefeaturing: -VDS=250V -Ros(on)max.=0.165Q •Overcurrentthresholdsetto16Apeak •DualfootprintforIGBT/MOSFETpackage: 一DPAK -PowerFlat6x5 •Single-shuntcurrentsensing,suitablefor: -Sensor

BC847BLD

SMALLSIGNALNPNTRANSISTORWITHCONTROLLEDBASE-EMITTERVOLTAGE

BC847BLD

SMALLSIGNALNPNTRANSISTORWITHCONTROLLEDBASE-EMITTERVOLTAGE

Features •LowDeviationinBase-EmitterVoltage •SurfaceMountPackage •IdeallySuitedforAutomatedAssemblyProcesses •LeadFreebyDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability