45V NPN SMALL SIGNAL TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 45V • IC = 100mA High Collector Current • PD = 435mW Power Dissipation • 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 • 0.4mm Height Pac

文件：395.9 Kbytes 页数：7 Pages

DIODES

美台半导体

45V NPN SMALL SIGNAL TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 45V • IC = 100mA High Collector Current • PD = 435mW Power Dissipation • 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 • 0.4mm Height Pac

文件：395.9 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：3-XFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.1A 3DFN

PAM

龙鼎微

45V NPN SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO > 45V IC = 100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40 Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary PNP Type BC857BZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：217.01 Kbytes 页数：7 Pages

DIODES

美台半导体

Small Signal Transistor

Features - Power dissipation PCM: 0.20W (@TA=25 °C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V - Operating and storage junction temperature range: TJ, TSTG= -65 to +150 °C

文件：156.63 Kbytes 页数：5 Pages

COMCHIP

典琦

NPN General purpose transistor

Features 1) BVCEO>45V(IC=1mA) 2) Complements the BC857B HZG. Application AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

文件：1.36945 Mbytes 页数：8 Pages

ROHM

罗姆