BC847B-G

Small Signal Transistor

Features -PowerdissipationPCM:0.20W(@TA=25°C) -CollectorcurrentICM:0.1A -Collector-basevoltageVCBO:BC846=80VBC847=50VBC848=30V -Operatingandstoragejunctiontemperaturerange:TJ,TSTG=-65to+150°C

BC847BHZG

NPNGeneralpurposetransistor

Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC857BHZG. Application AUDIOFREQUENCYSMALLSIGNALAMPLIFIER

BC847BL

GENERALPURPOSETRANSISTORSNPNSILICON

DESCRIPTION The BC846AL/BLA847848AL/CLare availableinSOT23package. FEATURES ⚫Highcurrentgain ⚫ExcellenthFElinearity ⚫Lownoisebetween30Hzand15kHz ⚫ForAFinputstagesanddriverapplications ⚫AvailableinSOT23package APPLICATIONS ⚫Ge

BC847BL

3-phaseinverterbasedonSTSPIN32F0251

Features •Inputvoltage什om20Vto120VDC/AC •STD17NF25MOSFETspowerstagefeaturing: -VDS=250V -Ros(on)max.=0.165Q •Overcurrentthresholdsetto16Apeak •DualfootprintforIGBT/MOSFETpackage: 一DPAK -PowerFlat6x5 •Single-shuntcurrentsensing,suitablefor: -Sensor

BC847BLD

SMALLSIGNALNPNTRANSISTORWITHCONTROLLEDBASE-EMITTERVOLTAGE

BC847BLD

SMALLSIGNALNPNTRANSISTORWITHCONTROLLEDBASE-EMITTERVOLTAGE

Features •LowDeviationinBase-EmitterVoltage •SurfaceMountPackage •IdeallySuitedforAutomatedAssemblyProcesses •LeadFreebyDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability

BC847BLP

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>45V •IC=100mAHighCollectorCurrent •PD=1000mWPowerDissipation •0.60mm2PackageFootprint,13timesSmallerthanSOT23 •0.5mmHeightPackageMinimizingOff-BoardProfile •ComplementaryPNPTypeBC857BLP •TotallyLead-Free&FullyRoHSCompliant(Notes1&

BC847BLP

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

BC847BLP

45VNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

BC847BM

45V,100mANPNgeneral-purposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

PHI