N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1400 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and good body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard product AOL1400 is Pb-free (meets ROHS &

文件：124.18 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1400 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and good body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard product AOL1400 is Pb-free (meets ROHS &

文件：124.18 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AOL1401 is Pb-free (meets ROHS & S

文件：124.75 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AOL1401 is Pb-free (meets ROHS & S

文件：124.75 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1408 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1408 is Pb-free (meets ROHS & Sony

文件：128.4 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1408 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1408 is Pb-free (meets ROHS & Sony

文件：128.4 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1412 is

文件：166.76 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. -RoHS Compliant -Halogen and Antimony Free Gre

文件：230.15 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1414 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1414 is Pb-free (meets ROHS & Sony 259 specificat

文件：122.97 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1414 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1414 is Pb-free (meets ROHS & Sony 259 specificat

文件：122.97 Kbytes 页数：5 Pages

AOSMD

万国半导体