N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1418 is Pb-free (meets ROHS & Sony 259 specificat

文件：130.78 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1418 is Pb-free (meets ROHS & Sony 259 specificat

文件：130.78 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1420 is Pb-free (meets ROHS & Sony 259 specificat

文件：127.09 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1420 is Pb-free (meets ROHS & Sony 259 specificat

文件：127.09 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD protected.This device is suitable for use as a load switch. Standard Product AOL1424 is Pb

文件：120.71 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOL1426 is Pb-free (meets ROHS & Sony 259 specifications). AOL1426L is

文件：126.47 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOL1426 is Pb-free (meets ROHS & Sony 259 specifications). AOL1426L is

文件：126.47 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOL1428 is Pb-free (meets ROHS & Sony 259 specifications). AOL1428L is

文件：129.65 Kbytes 页数：5 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

General Description The AOL1428A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS

文件：251.15 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOL1432 is Pb-free (meets ROHS & Sony 259 specifications). AO

文件：130.27 Kbytes 页数：5 Pages

AOSMD

万国半导体