N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Hal

文件：250.07 Kbytes 页数：6 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

QMA Right Angle Crimp FOR RG58 /195 Series

ELECTRICAL: IMPEDENCE: 50 OHMS WITHSTAND VOLTAGE: 1000V FREQUENCY RANGE: 0~18 GHz DURABILITY: 100 CYCLE CABLE RETENTION: > 40 POUNDS MISCELLANEOUS COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPECIFICATIONS PS-0031. ALL DIMENSIONS ARE FOR REFERENCE ONLY.

文件：37.73 Kbytes 页数：1 Pages

L-COM

英飞畅

QMA Right Angle Crimp FOR RG58 /195 Series

ELECTRICAL: IMPEDENCE: 50 OHMS WITHSTAND VOLTAGE: 1000V FREQUENCY RANGE: 0~18 GHz DURABILITY: 100 CYCLE CABLE RETENTION: > 40 POUNDS MISCELLANEOUS COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPECIFICATIONS PS-0031. ALL DIMENSIONS ARE FOR REFERENCE ONLY.

文件：37.73 Kbytes 页数：1 Pages

L-COM

英飞畅

CON,RP-BNC PLUG CRIMP LMR195

ELECTRICAL: IMPEDANCE: 50 OHMS WITHSTAND VOLTAGE: 1500V FREQUENCY RANGE: 0 ~ 4 GHz VSWR ≤ 1.30 @ 0 ~ 4 GHz DURABILITY: ≥ 500 CYCLE CABLE RETENTION: >30 lbs. MISCELLANEOUS: COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPECIFICATIONS PS-0031 ALL DIMENSIONS ARE FOR

文件：105.08 Kbytes 页数：1 Pages

L-COM

英飞畅