N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1446 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1446 is Pb-free (meets ROHS & Sony 259 specificat

文件：164.75 Kbytes 页数：5 Pages

AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1446 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1446 is Pb-free (meets ROHS & Sony 259 specificat

文件：164.75 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1448 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID (at VGS=10V)

文件：151.27 Kbytes 页数：6 Pages

AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AOL1454 is Pb-free (meets ROHS & Sony 259 specifi

文件：134.87 Kbytes 页数：5 Pages

AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Hal

文件：250.07 Kbytes 页数：6 Pages

AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1702L i

文件：301.96 Kbytes 页数：6 Pages

AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL170

文件：148.56 Kbytes 页数：6 Pages

AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Hal

文件：253.49 Kbytes 页数：6 Pages

AOSMD

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N-Channel Enhancement Mode Field Effect Transistor

General Description SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. - RoHS Compliant - Halogen Free Feature

文件：165.3 Kbytes 页数：7 Pages

AOSMD

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40V N-Channel AlphaSGT TM

General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Wave solderable • Standard Vgsth Driving • Excellent Qg x RDS(ON) Product (FOM) • RoHS 2.0 and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification

文件：355.23 Kbytes 页数：6 Pages

AOSMD

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