N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Hal

文件：253.49 Kbytes 页数：6 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

High-Output-Drive, 10MHz, 10V/關s, Rail-to-Rail I/O Op Amps with Shutdown

1 General Description The AS1710/AS1712 are low-offset, high-output CMOS op amps that deliver 200mA of peak output current from a single supply (2.7 to 5.5V). These devices were specifically designed to drive typical headset levels (32Ω), as well as bias RF power amplifiers for wireless hand

文件：750.65 Kbytes 页数：17 Pages

AMSCO

艾迈斯欧司朗

High-Output-Drive, 10MHz, 10V/us, Rail-to-Rail I/O Op Amps with Shutdown

文件：747.65 Kbytes 页数：17 Pages

AMSCO

艾迈斯欧司朗

High-Output-Drive, 10MHz, 10V/關s, Rail-to-Rail I/O Op Amps with Shutdown

文件：1.14175 Mbytes 页数：20 Pages

AMSCO

艾迈斯欧司朗