| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON) 文件:2.51141 Mbytes 页数:4 Pages | KEXIN 科信电子 | KEXIN | ||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 spec 文件:112.77 Kbytes 页数:4 Pages | AOSMD 万国半导体 | AOSMD | ||
30V N-Channel MOSFET 30V N-Channel MOSFET General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Product Summary VDS 30V ID(at VGS = 文件:2.16639 Mbytes 页数:5 Pages | AOSMD 万国半导体 | AOSMD | ||
丝印:42**;Package:SOT-26;N-Channel Enhancement Mode Field Effect Transistor General Description The AO6402A/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the s 文件:279.45 Kbytes 页数:5 Pages | AOSMD 万国半导体 | AOSMD | ||
丝印:42KL;Package:SOT23-6;30V N-Channel MOSFET Features VDS (V) = 30V ID = 7.5A (VGS = 10V) RDS(ON) 文件:484.5 Kbytes 页数:7 Pages | UMW 友台半导体 | UMW | ||
丝印:42KLU50;Package:SOT23-6;30V N-Channel MOSFET General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass th 文件:375.22 Kbytes 页数:7 Pages | EVVOSEMI 翊欧 | EVVOSEMI | ||
N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON) 文件:1.62084 Mbytes 页数:4 Pages | KEXIN 科信电子 | KEXIN | ||
N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON) 文件:1.93437 Mbytes 页数:4 Pages | KEXIN 科信电子 | KEXIN | ||
30V N-Channel MOSFET 30V N-Channel MOSFET General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Product Summary VDS 30V ID(at VGS = 文件:273.98 Kbytes 页数:5 Pages | AOSMD 万国半导体 | AOSMD | ||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. It may be used in common-drain configuration to form a bidirectional blocking switch. AO6403 is Pb 文件:114.21 Kbytes 页数:4 Pages | AOSMD 万国半导体 | AOSMD |
技术参数
- Package:
TSOP-6L
- Configuration:
Single
- Polarity:
P
- VDS (V):
-30
- VGS (±V):
20
- 10V:
52
- 4.5V:
87
- ID @ 25°C (A):
-5
- PD @ 25°C (W):
2
- Qg (4.5V)(nC):
4.60
- Qg (10V)(nC):
9.20
- VGS(th) max (V):
-2.40
- Ciss (pF):
520
- Coss (pF):
100
- Crss (pF):
65
- Qgd (nC):
2.20
- tD(on) (ns):
7.50
- tD(off) (ns):
19
- Trr (ns):
11
- Qrr (nC):
5.30
- Qualification:
Industrial
- ESD Diode:
No
- Tj max (°C):
150
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS美国万代 |
24+ |
TSOP-6/SOT23-6 |
888000 |
AOS代理商 优势现货美国万代全系列MOS管 |
询价 | ||
AOS万代 |
2005 |
TSOP6 |
612 |
全新原装 正品现货 |
询价 | ||
AO |
25+ |
SOT23-6 |
32144 |
AO全新特价AO6405即刻询购立享优惠#长期有货 |
询价 | ||
AO |
16+ |
TSOP-6 |
12500 |
进口原装现货/价格优势! |
询价 | ||
ALPHA |
2016+ |
SOT23-6 |
4660 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
AOS |
16/17+ |
TSSOP-6 |
7699 |
AOS现货库存长期供应 |
询价 | ||
AOS/万代 |
2019+ |
TSOP6 |
6700 |
原厂渠道 可含税出货 |
询价 | ||
AO |
2019+PB |
TSOP-6 |
12500 |
原装正品 可含税交易 |
询价 | ||
AOS/万代 |
2021+ |
TSOP6 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
AOS |
24+ |
TSOP |
22048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 |
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