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AO6401-HF

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON)

文件:2.51141 Mbytes 页数:4 Pages

KEXIN

科信电子

AO6401L

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 spec

文件:112.77 Kbytes 页数:4 Pages

AOSMD

万国半导体

AO6402

30V N-Channel MOSFET

30V N-Channel MOSFET General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Product Summary VDS 30V ID(at VGS =

文件:2.16639 Mbytes 页数:5 Pages

AOSMD

万国半导体

AO6402A

丝印:42**;Package:SOT-26;N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6402A/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the s

文件:279.45 Kbytes 页数:5 Pages

AOSMD

万国半导体

AO6402A

丝印:42KL;Package:SOT23-6;30V N-Channel MOSFET

Features VDS (V) = 30V ID = 7.5A (VGS = 10V) RDS(ON)

文件:484.5 Kbytes 页数:7 Pages

UMW

友台半导体

AO6402A

丝印:42KLU50;Package:SOT23-6;30V N-Channel MOSFET

General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass th

文件:375.22 Kbytes 页数:7 Pages

EVVOSEMI

翊欧

AO6402A

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON)

文件:1.62084 Mbytes 页数:4 Pages

KEXIN

科信电子

AO6402A-HF

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON)

文件:1.93437 Mbytes 页数:4 Pages

KEXIN

科信电子

AO6402B

30V N-Channel MOSFET

30V N-Channel MOSFET General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Product Summary VDS 30V ID(at VGS =

文件:273.98 Kbytes 页数:5 Pages

AOSMD

万国半导体

AO6403

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. It may be used in common-drain configuration to form a bidirectional blocking switch. AO6403 is Pb

文件:114.21 Kbytes 页数:4 Pages

AOSMD

万国半导体

技术参数

  • Package:

    TSOP-6L

  • Configuration:

    Single

  • Polarity:

    P

  • VDS (V):

    -30

  • VGS (±V):

    20

  • 10V:

    52

  • 4.5V:

    87

  • ID @ 25°C (A):

    -5

  • PD @ 25°C (W):

    2

  • Qg (4.5V)(nC):

    4.60

  • Qg (10V)(nC):

    9.20

  • VGS(th) max (V):

    -2.40

  • Ciss (pF):

    520

  • Coss (pF):

    100

  • Crss (pF):

    65

  • Qgd (nC):

    2.20

  • tD(on) (ns):

    7.50

  • tD(off) (ns):

    19

  • Trr (ns):

    11

  • Qrr (nC):

    5.30

  • Qualification:

    Industrial

  • ESD Diode:

    No

  • Tj max (°C):

    150

供应商型号品牌批号封装库存备注价格
AOS美国万代
24+
TSOP-6/SOT23-6
888000
AOS代理商 优势现货美国万代全系列MOS管
询价
AOS万代
2005
TSOP6
612
全新原装 正品现货
询价
AO
25+
SOT23-6
32144
AO全新特价AO6405即刻询购立享优惠#长期有货
询价
AO
16+
TSOP-6
12500
进口原装现货/价格优势!
询价
ALPHA
2016+
SOT23-6
4660
只做原装,假一罚十,公司可开17%增值税发票!
询价
AOS
16/17+
TSSOP-6
7699
AOS现货库存长期供应
询价
AOS/万代
2019+
TSOP6
6700
原厂渠道 可含税出货
询价
AO
2019+PB
TSOP-6
12500
原装正品 可含税交易
询价
AOS/万代
2021+
TSOP6
9000
原装现货,随时欢迎询价
询价
AOS
24+
TSOP
22048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
更多AO6供应商 更新时间2025-12-16 10:03:00