N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to th

文件：115.93 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：2.24451 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00653 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

30V N-Channel MOSFET

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Product Summary VDS

文件：2.77684 Mbytes 页数：6 Pages

WHXPCB

万和兴电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：2.67175 Mbytes 页数：5 Pages

KEXIN

科信电子

30V P-Channel MOSFET

General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID (at VGS=-10V) -6A RDS(ON) (at VGS=-10V)

文件：604.76 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -6 A (VGS =-10V) ● RDS(ON)

文件：2.55462 Mbytes 页数：5 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4405L( Green Product ) is offered in a lead-free package. Features VDS (V) = -30V ID = -6.0A RDS(O

文件：114.16 Kbytes 页数：4 Pages

ALPHA

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：1.69365 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

30V P-Channel MOSFET

General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID (at VGS=-10V) -6A RDS(ON) (at VG

文件：2.8153 Mbytes 页数：6 Pages

WHXPCB

万和兴电子