30V P-Channel MOSFET

General Description The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V

文件：2.21011 Mbytes 页数：5 Pages

WHXPCB

万和兴电子

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：959.25 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-6 A (VGS =-10V) ● RDS(ON)

文件：1.86699 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：1.27519 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to t

文件：587.35 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.84875 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

General Features VDS = 30V ID =8.5 A RDS(ON)

文件：496.46 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

Description The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =8.5 A RDS(ON)

文件：334.65 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

文件：134.7 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

文件：134.7 Kbytes 页数：4 Pages

AOSMD

万国半导体