P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) ● RDS(ON)

文件：1.88176 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs

文件：997.85 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) ● RDS(ON)

文件：2.34805 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4407 is Pb-free (meets ROHS & Sony 259 specifications)

文件：168.67 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS (V)

文件：122.56 Kbytes 页数：5 Pages

ALPHA

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON)

文件：1.59378 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS

文件：171.5 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=11A,RDS(ON)

文件：475.81 Kbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00676 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Power MOSFET

Features VDS= 20V, ID= 10 A RDS(ON)

文件：1.78135 Mbytes 页数：5 Pages

Bychip

百域芯