P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) ● RDS(ON)

文件：2.34805 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4407 is Pb-free (meets ROHS & Sony 259 specifications)

文件：168.67 Kbytes 页数：4 Pages

AOSMD

万国半导体

Plastic Encapsulated Device

文件：30.53 Kbytes 页数：3 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AON4407L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. -RoHS Compliant -Halogen Free Features VDS (V) = -12V ID = -9 A (VGS = -4.5V

文件：164.88 Kbytes 页数：5 Pages

AOSMD

万国半导体