丝印：A1962O；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：A1962R；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：A1981；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features High DC Current Gain Complementary Pair with 2SC5344 APPLICATIONS Audio Power Amplifier Application

文件：1.43099 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：A1981；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features High DC Current Gain Complementary Pair with 2SC5344 APPLICATIONS Audio Power Amplifier Application

文件：1.43099 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：A19T；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

General Features VDs = -30V.ID = -4.2A RDS(ON)

文件：3.79248 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：A19T；Package：SOT23；P-Channel Enhancement Mode Power MOSFET

General Features ® Vos =-30Vlo = 424 Rosin

文件：2.60787 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：A19T；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -4.2A RDS(ON)

文件：165.34 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：A190A；Package：SMA；Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

文件：65.88 Kbytes 页数：3 Pages

CTC

沛伦

丝印：A190CA；Package：SMA；Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

文件：65.88 Kbytes 页数：3 Pages

CTC

沛伦

丝印：A19A；Package：SMA；Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

文件：65.88 Kbytes 页数：3 Pages

CTC

沛伦