丝印：8752；Package：WSON；CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low On-Resistance • Dual Independent MOSFETs • Space Saving SON 2 × 2 mm Plastic Package • Optimized for 5 V Gate Driver • Avalanche Rated • Pb and Halogen Free • RoHS Compliant 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele

文件：655.01 Kbytes 页数：12 Pages

TI

德州仪器

丝印：8752；Package：WSON；CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low On-Resistance • Dual Independent MOSFETs • Space Saving SON 2 × 2 mm Plastic Package • Optimized for 5 V Gate Driver • Avalanche Rated • Pb and Halogen Free • RoHS Compliant 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele

文件：655.01 Kbytes 页数：12 Pages

TI

德州仪器

丝印：8752；Package：WSON；CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low On-Resistance • Dual Independent MOSFETs • Space Saving SON 2 × 2 mm Plastic Package • Optimized for 5 V Gate Driver • Avalanche Rated • Pb and Halogen Free • RoHS Compliant 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele

文件：655.01 Kbytes 页数：12 Pages

TI

德州仪器

丝印：8752；Package：WSON；CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low On-Resistance • Dual Independent MOSFETs • Space Saving SON 2 × 2 mm Plastic Package • Optimized for 5 V Gate Driver • Avalanche Rated • Pb and Halogen Free • RoHS Compliant 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele

文件：655.01 Kbytes 页数：12 Pages

TI

德州仪器

丝印：8752；Package：WSON；CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low On-Resistance • Dual Independent MOSFETs • Space Saving SON 2 × 2 mm Plastic Package • Optimized for 5 V Gate Driver • Avalanche Rated • Pb and Halogen Free • RoHS Compliant 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele

文件：655.01 Kbytes 页数：12 Pages

TI

德州仪器

丝印：87503E；Package：VSON；CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Dual N-Ch Common Source MOSFETs • Optimized for 5-V Gate Drive • Low-Thermal Resistance • Low Qg and Qgd • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • USB Type-C/PD VBus Protection • Battery Protection

文件：770.6 Kbytes 页数：16 Pages

TI

德州仪器

丝印：87503E；Package：VSON；CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Dual N-Ch Common Source MOSFETs • Optimized for 5-V Gate Drive • Low-Thermal Resistance • Low Qg and Qgd • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • USB Type-C/PD VBus Protection • Battery Protection

文件：770.6 Kbytes 页数：16 Pages

TI

德州仪器

丝印：87503E；Package：VSON；CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Dual N-Ch Common Source MOSFETs • Optimized for 5-V Gate Drive • Low-Thermal Resistance • Low Qg and Qgd • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • USB Type-C/PD VBus Protection • Battery Protection

文件：770.6 Kbytes 页数：16 Pages

TI

德州仪器

丝印：87503E；Package：VSON；CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Dual N-Ch Common Source MOSFETs • Optimized for 5-V Gate Drive • Low-Thermal Resistance • Low Qg and Qgd • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • USB Type-C/PD VBus Protection • Battery Protection

文件：770.6 Kbytes 页数：16 Pages

TI

德州仪器

丝印：87588N；Package：PTAB；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：642.29 Kbytes 页数：22 Pages

TI

德州仪器