丝印：87588N；Package：PTAB(MPA)；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：645.84 Kbytes 页数：23 Pages

TI

德州仪器

丝印：87588N；Package：PTAB；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：642.29 Kbytes 页数：22 Pages

TI

德州仪器

丝印：87588N；Package：PTAB(MPA)；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：645.84 Kbytes 页数：23 Pages

TI

德州仪器

丝印：87588N；Package：PTAB(MPA)；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：645.84 Kbytes 页数：23 Pages

TI

德州仪器

丝印：87588N；Package：PTAB；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：642.29 Kbytes 页数：22 Pages

TI

德州仪器

丝印：87588N；Package：PTAB；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：642.29 Kbytes 页数：22 Pages

TI

德州仪器

丝印：87588N；Package：PTAB(MPA)；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：645.84 Kbytes 页数：23 Pages

TI

德州仪器

丝印：87588N；Package：PTAB；CSD87588N Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 20 A • Up to 25 A Operation • High Density – 5 mm x 2.5 mm LGA Footprint • Double Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Low Inductance Package

文件：642.29 Kbytes 页数：22 Pages

TI

德州仪器

丝印：8759406VXAQ；Package：TO；Micropower Voltage Reference Diode

1FEATURES 2• Operating Current of 20 μA to 20 mA • 0.6Ω Dynamic Impedance (A grade) • Low Temperature Coefficient • Low Voltage Reference—2.5V DESCRIPTION The LM185-2.5 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 20 μA to 20 mA current range, they featur

文件：729.45 Kbytes 页数：18 Pages

TI

德州仪器

丝印：8759406VXAQ；Package：TO；Micropower Voltage Reference Diode

1FEATURES 2• Operating Current of 20 μA to 20 mA • 0.6Ω Dynamic Impedance (A grade) • Low Temperature Coefficient • Low Voltage Reference—2.5V DESCRIPTION The LM185-2.5 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 20 μA to 20 mA current range, they featur

文件：729.45 Kbytes 页数：18 Pages

TI

德州仪器