丝印：87503E；Package：VSON；CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Dual N-Ch Common Source MOSFETs • Optimized for 5-V Gate Drive • Low-Thermal Resistance • Low Qg and Qgd • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • USB Type-C/PD VBus Protection • Battery Protection

文件：770.6 Kbytes 页数：16 Pages

TI

德州仪器

CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Dual N-Ch Common Source MOSFETs • Optimized for 5-V Gate Drive • Low-Thermal Resistance • Low Qg and Qgd • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • USB Type-C/PD VBus Protection • Battery Protection

文件：770.6 Kbytes 页数：16 Pages

TI

德州仪器

30-V N-Channel NexFET Power MOSFETs

文件：485.89 Kbytes 页数：12 Pages

TI

德州仪器

CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Dual N-Ch Common Source MOSFETs • Optimized for 5-V Gate Drive • Low-Thermal Resistance • Low Qg and Qgd • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • USB Type-C/PD VBus Protection • Battery Protection

文件：770.6 Kbytes 页数：16 Pages

TI

德州仪器