丝印：88539N；Package：SOIC；CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

文件：1.15471 Mbytes 页数：14 Pages

TI

德州仪器

CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

文件：1.15809 Mbytes 页数：15 Pages

TI

德州仪器

CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

文件：1.15471 Mbytes 页数：14 Pages

TI

德州仪器

Dual 60 V N-Channel NexFET Power MOSFETs

文件：961.16 Kbytes 页数：13 Pages

TI

德州仪器

CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

文件：1.15809 Mbytes 页数：15 Pages

TI

德州仪器