CSD87503Q3E.B中文资料德州仪器数据手册PDF规格书

厂商型号	CSD87503Q3E.B
功能描述	CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs
丝印标识	87503E
封装外壳	VSON
文件大小	770.6 Kbytes
页面数量	16 页
生产厂商	Texas Instruments
企业简称	TI2【德州仪器】
中文名称	美国德州仪器公司官网
原厂标识	TI2
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-2 11:52:00
人工找货	CSD87503Q3E.B价格和库存，欢迎联系客服免费人工找货

1 Features

1• Dual N-Ch Common Source MOSFETs

• Optimized for 5-V Gate Drive

• Low-Thermal Resistance

• Low Qg and Qgd

• Lead-Free Terminal Plating

• RoHS Compliant

• Halogen Free

• SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

• USB Type-C/PD VBus Protection

• Battery Protection

• Load Switch

3 Description

The CSD87503Q3E is a 30-V, 13.5-mΩ, common

source, dual N-channel device designed for USB

Type-C/PD and battery protection. This SON 3.3 ×

3.3 mm device has low drain-to-drain on-resistance

that minimizes losses and offers low component

count for space constrained applications.