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D7V5S1U3LP20-7

Marking:75N;Package:U-DFN2020-3;1 CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplications

DIODESDiodes Incorporated

美台半导体

PJP75N06SA-AU

Marking:75N06SA;Package:TO-220AB-L;60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

RM75N60ALD

Marking:75N60;Package:TO-252-2L;N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=75A RDS(ON)

RECTRON

Rectron Semiconductor

RM75N60LD

Marking:75N60;Package:TO-252-2L;N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=75A RDS(ON)

RECTRON

Rectron Semiconductor

RM75N60T2

Marking:75N60;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

GeneralFeatures Vds=60V,Id=75A. Rds(on)

RECTRON

Rectron Semiconductor

STB75NF20

Marking:75NF20;Package:D2PAK;N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters ■Exceptionaldv/dt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP75NF20

Marking:75NF20;Package:TO-220;N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters ■Exceptionaldv/dt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW75N60M6

Marking:75N60M6;Package:TO-247;N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters •BoostPFCconverters Description ThenewMDmesh™M6technologyincorporat

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW75N60M6-4

Marking:75N60M6;Package:TO247-4;N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO247-4 package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected •Excellentswitchingperformancethankstotheextradrivingsourcepin Applications •Switchingapplications •LLCconverters •Boo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW75NF20

Marking:75NF20;Package:TO-247;N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters ■Exceptionaldv/dt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    75N

  • 制造商:

    TYSEMI

  • 制造商全称:

    TY Semiconductor Co., Ltd

  • 功能描述:

    VDS=75V,RDS(on)=0.009 VGS=10V,ID=30A VDS=75V,RDS(on)=0.011VGS=4.5V,ID=20A

供应商型号品牌批号封装库存备注价格
IDT
24+
BGA
630
询价
UTC
24+/25+
TO-220F
12
原装正品现货库存价优
询价
ST
23+
TO-220
9526
询价
ST
23+
TO-220
5000
原装正品,假一罚十
询价
-
24+
BGA
1068
原装现货假一罚十
询价
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
询价
ST
16+
TO220
400
全新原装现货
询价
ST
24+
TO-220
3500
原装现货,可开13%税票
询价
IDT
24+
DIP-8
25843
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
仙童/哈里斯/英飞凌
23+
TO-220
3000
全新原装
询价
更多75N供应商 更新时间2025-6-25 16:30:00