STW75N60M6

丝印：75N60M6；Package：TO-247；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters •BoostPFCconverters Description ThenewMDmesh™M6technologyincorporat

STW75N60M6

N沟道600 V、32 mOhm典型值、72 A MDmesh M6功率MOSFET，TO-247封装; • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.\n\n

STW75N60M6-4

丝印：75N60M6；Package：TO247-4；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO247-4 package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected •Excellentswitchingperformancethankstotheextradrivingsourcepin Applications •Switchingapplications •LLCconverters •Boo

STWA75N60M6

N-channel600V,32mtyp.,72A,MDmeshTMM6PowerMOSFETinaTO‑247longleadspackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof