丝印：75N60M6；Package：TO-247；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

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丝印：75N60M6；Package：TO247-4；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO247-4 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boo

文件：513.77 Kbytes 页数：12 Pages

STMICROELECTRONICS

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