丝印：75N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  One Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications

文件：498.37 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：75N06SA；Package：TO-220AB-L；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：454.85 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：75N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =75A RDS(ON)

文件：581.06 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：75N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =75A RDS(ON)

文件：389.94 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：75N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features Vds =60V,Id =75A. Rds(on)

文件：563.97 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：75NF20；Package：D2PAK；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

文件：510.88 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：75NF20；Package：TO-220；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

文件：510.88 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：75N60M6；Package：TO-247；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

文件：539.39 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：75N60M6；Package：TO247-4；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO247-4 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boo

文件：513.77 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：75NF20；Package：TO-247；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

文件：510.88 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体