丝印：75N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =75A RDS(ON)

文件：389.94 Kbytes 页数：7 Pages

RECTRON

丽正

MOSFET

Rectron

丽正

Low Loss IGBT in Trench and Fieldstop technology

文件：377.79 Kbytes 页数：12 Pages

INFINEON

英飞凌

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ● Very low VCE(sat) 1.5V (typ.) ● Maximum Junction Temperature 175°C ● Short circuit withstand time 5s ● Positive temperature coefficient in VCE(sat) ● very tigh

文件：411.41 Kbytes 页数：13 Pages

INFINEON

英飞凌

CoolMOS Power MOSFET

文件：70.97 Kbytes 页数：3 Pages

IXYS

艾赛斯