丝印：75N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =75A RDS(ON)

文件：581.06 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：75N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =75A RDS(ON)

文件：389.94 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：75N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features Vds =60V,Id =75A. Rds(on)

文件：563.97 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：75N60M6；Package：TO-247；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

文件：539.39 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：75N60M6；Package：TO247-4；N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO247-4 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boo

文件：513.77 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：75N60DM6；Package：Package；N-channel 600 V, 32 m廓 typ., 72 A MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

文件：333.14 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：75N60DM6；Package：TO-247longleads；N-channel 600 V, 32 m廓 typ., 72 A MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

文件：333.14 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体