BUK4D72-30

Marking：6G；Package：DFN2020MD-6；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •Smallandleadle

MMBZ27VB-QC

Marking：6G；Package：DFN1412D-3；Low capacitance bidirectional dual line ESD protection diode

1.Generaldescription ESDprotectiondeviceinanultrasmallDFN1412D-3(SOT8009)leadlessSurface-MountedDevice (SMD)plasticpackagewithsidewettableflanks,designedtoprotecttwolinesfromthedamage causedbyElectroStaticDischarge(ESD)andothertransients. 2.Featuresandben

NHUMH9

Marking：6G；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMH9

Marking：6G；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH102.247NH

NHUMH9-Q

Marking：6G；Package：SOT363；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

PBSS4041PX

Marking：6G；Package：SC-62；60 V, 5 A PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB)

PEMB20

Marking：6G；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

1.1Generaldescription PNP/PNPresistor-equippedtransistors 1.2Features nBuilt-inbiasresistors nSimplifiescircuitdesign nReducescomponentcount nReducespickandplacecost 1.3Applications nLowcurrentperipheraldriver nControlofICinputs nReplacementofgeneral-purpos

PMPB10UP

Marking：6G；Package：SOT1220；12 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •TrenchMOSFETtechnology •Sidewe

TLE4966G

Marking：6G；Package：PG-TSOP6-6-9；High Precision Hall-Effect Switch with Direction Detection

Features •2.7Vto24Vsupplyvoltageoperation •Operationfromunregulatedpowersupply •Highsensitivityandhighstability ofthemagneticswitchingpoints •Highresistancetomechanicalstress byActiveErrorCompensation •Reversebatteryprotection(-18V) •Superiortemperaturestabi

TPS7A0508PDQNR

Marking：6G；Package：X2SON；TPS7A05 1-μA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

1Features 1•UltralowIQ:1μA(typ),3μA(max) –IGND:6μA(typ)at200mA •Excellenttransientresponse •Packages: –1.0-mm×1.0-mmX2SON(4) –0.65-mm×0.65-mmDSBGA(4) –SOT-23(5) –SOT-23(3) •Inputvoltagerange:1.4Vto5.5V •Outputaccuracy:1%typical,3%ma