丝印：6G；Package：DFN2020MD-6；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Small and leadle

文件：331.4 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6G；Package：DFN1412D-3；Low capacitance bidirectional dual line ESD protection diode

1. General description ESD protection device in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side wettable flanks, designed to protect two lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 2. Features and ben

文件：238.91 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6G；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：299.18 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6G；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1. General description NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA PNP/PNP complement: NPN/PNP complement: NHUMH10 2.2 47 NH

文件：299.21 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6G；Package：SOT363；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：306.52 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6G；Package：SC-62；60 V, 5 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Board (PCB)

文件：745.26 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6G；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

1.1 General description PNP/PNP resistor-equipped transistors 1.2 Features n Built-in bias resistors n Simplifies circuit design n Reduces component count n Reduces pick and place cost 1.3 Applications n Low current peripheral driver n Control of IC inputs n Replacement of general-purpos

文件：71.41 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6G；Package：SOT1220；12 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side we

文件：321.3 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6G；Package：PG-TSOP6-6-9；High Precision Hall-Effect Switch with Direction Detection

Features •2.7 V to 24 V supply voltage operation •Operation from unregulated power supply •High sensitivity and high stability of the magnetic switching points •High resistance to mechanical stress by Active Error Compensation •Reverse battery protection (-18 V) •Superior temperature stabi

文件：1.19444 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：6G；Package：X2SON；TPS7A05 1-μA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

1 Features 1• Ultralow IQ: 1 μA (typ), 3 μA (max) – IGND: 6 μA (typ) at 200 mA • Excellent transient response • Packages: – 1.0-mm × 1.0-mm X2SON (4) – 0.65-mm × 0.65-mm DSBGA (4) – SOT-23 (5) – SOT-23 (3) • Input voltage range: 1.4 V to 5.5 V • Output accuracy: 1% typical, 3% ma

文件：3.71576 Mbytes 页数：55 Pages

TI

德州仪器