Metal Oxide Semiconductor Field Effect Transistor

文件：1.34622 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：65C6600；Package：PG-TO262；650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：2.09837 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6099；Package：PG-TO220FullPAK；CoolMOS??C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS TM C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

文件：3.83435 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：65C6190；Package：PG-TO220FullPAK；Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.21772 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6280；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor

Features • Extremely low losses due to very FOM Rdso *Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications: Adapter

文件：2.11023 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6380；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The result

文件：1.95871 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6600；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：2.09837 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6099；Package：PG-TO263；CoolMOS??C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS TM C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

文件：3.83435 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：65C6190；Package：PG-TO263；Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.21772 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6280；Package：PG-TO263；650V CoolMOS C6 Power Transistor

Features • Extremely low losses due to very FOM Rdso *Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications: Adapter

文件：2.11023 Mbytes 页数：19 Pages

Infineon

英飞凌