首页 >IPB65R280C6>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPB65R280C6 | 650V CoolMOS C6 Power Transistor Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPB65R280C6 | Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
650VCoolMOSC6PowerTransistor Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
650VCoolMOSC6PowerTransistor Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650VCoolMOSC6PowerTransistor Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
650VCoolMOSC6PowerTransistor Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650VCoolMOSC6PowerTransistor Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
IPB65R280C6
- 功能描述：
MOSFET 650V CoolMOS C6 Power Transistor
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2021+ |
TO-263 |
18112 |
原装进口假一罚十 |
询价 | ||
INFINEON |
23+ |
D2PAK(TO-263) |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO-263 |
3000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
英飞凌 |
1746+ |
TO263 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
INFINEON |
20+ |
D2PAK(TO-263) |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
INFINE0N |
20+ |
TO-263 |
90000 |
全新原装正品/库存充足 |
询价 | ||
INFINEON/英飞凌 |
TO-263 |
198589 |
假一罚十原包原标签常备现货! |
询价 |
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