STRIPPING TOOL

文件：431.67 Kbytes 页数：1 Pages

ROSENBERGER

STRAIGHT PLUG (1-1/4?쇺?R)

文件：135.44 Kbytes 页数：2 Pages

ROSENBERGER

STRAIGHT PLUG (1-5/8?쒽)

文件：177.72 Kbytes 页数：2 Pages

ROSENBERGER

丝印：60S190D1；Package：PG-LSON-8-1；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC Standards

文件：655.49 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60S190D1；Package：PG-HSOF-8-3；600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC standards

文件：570.17 Kbytes 页数：17 Pages

Infineon

英飞凌

丝印：60S180P7；Package：PG-TO220；MOSFET 600V CoolMOS™ P7 Power Transistor

Features • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Excellent ESD robustness >2kV (HBM) for all products • Better RDS(on)/package products compared to competition enabled by a

文件：727.5 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：60S180P7；Package：PG-TO252-3；600V CoolMOS짧 P7 Power Transistor

MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P

文件：1.09526 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60S1K0CE；Package：PG-TO252；600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

文件：1.55701 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60S1K5D7；Package：PG-TO252-3；600V CoolMOSª PFD7 SJ Power Device

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Low switching losses Eoss, excellent thermal behavior • Fast body diode • Wide range portfolio of RDS(on) and package variations • Integrated zener diode

文件：608.21 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：60S1K0CE；Package：PG-TO251；600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

文件：1.55701 Mbytes 页数：14 Pages

Infineon

英飞凌