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IPAN60R180P7S

Marking:60S180P7;Package:PG-TO220;MOSFET 600V CoolMOS™ P7 Power Transistor

Features •Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness •Significantreductionofswitchingandconductionlosses •ExcellentESDrobustness>2kV(HBM)forallproducts •BetterRDS(on)/packageproductscomparedtocompetitionenabledbya

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD60R180P7S

Marking:60S180P7;Package:PG-TO252-3;600V CoolMOS짧 P7 Power Transistor

MOSFET600VCoolMOSªP7PowerTransistor TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.The600VCoolMOS™P7seriesisthesuccessortotheCoolMOS™P

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA60R180P7S

Marking:60S180P7;Package:PG-TO220FullPAK;600V CoolMOS짧 P7 Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPAW60R180P7S

Marking:60S180P7;Package:PG-TO220FullPAK;600V CoolMOS짧 P7 Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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