丝印：60S180P7；Package：PG-TO220；MOSFET 600V CoolMOS™ P7 Power Transistor

Features • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Excellent ESD robustness >2kV (HBM) for all products • Better RDS(on)/package products compared to competition enabled by a

文件：727.5 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：60S180P7；Package：PG-TO252-3；600V CoolMOS짧 P7 Power Transistor

MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P

文件：1.09526 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60S180P7；Package：PG-TO220FullPAK；600V CoolMOS짧 P7 Power Transistor

文件：1.07967 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60S180P7；Package：PG-TO220FullPAK；600V CoolMOS짧 P7 Power Transistor

文件：1.18604 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS짧 P7 Power Transistor

文件：1.07967 Mbytes 页数：14 Pages

Infineon

英飞凌